QuantERA Call 2025 Partner Search Tool

General Information

• Project title: Formation of defect centers in silicon carbide for single photon emission and quantum computing
• Type: Project looking for partner
• Organisation: Lukasiewicz Research Network - Institute of Microelectronics and Photonics
• Country: Poland (PL)

Research area

• Call topics:
  • Quantum Phenomena and Resources
• Keywords:

  qubit centers silicon carbide point defects ion implantation defects characterization

• Brief description of your expertise / expertise you are looking for:

  Our expertise is in the formation of point defects in silicon carbide by the implantation of carbon and silicon ions combined with thermal annealing at wide range of temperatures.These defects, such a: silicon vacancy, divacancy composed of silicon and carbon vacancy, nitrogen-carbon vacancy complex, and carbon antisite - carbon vacany complex have unique properties and can act as artificial atoms suitable for applications in quantum photonics and quantum computing. We have also experimental tools, such as high-resolution photoinduced transient spectroscopy (HRPITS) and deep level capacitance transient spectroscopy (DLTS) to determine the defects acivation energies and concentrations. We are looking for partners with the expertise in photoluminescence, being able to characterize the difects by the measurements of zero-phon lines as well as fabricate single-photon emitters using the samples provided by us. We also need a partner who will be able to deternine the defects spin properties.

• Brief description of your project / the project you would like to join:

  The project objective is to determine the influence of ion implantation and thermal annealing conditions on the formation of qubit centers in 4H-SiC. To achieve these objectives. The following tasks will be implemented. 1. Studies of defect structure modifications of high-purity semi-insulating (HPSI) 4H-SiC samples. 2. Studies of defect structure modifications of nitrogene-doped 4H-SiC epitaxial layers. As a result, the technology for obtaining silicon carbide suitable for quantum applications will be worked out.

Ernest Brzozowski

• Organisation: Lukasiewicz Research Network - Institute of Microelectronics and Photonics
• Position: senior researcher, Ph.D.
• E-mail: ernest.brzozowski@imif.lukasiewicz.gov.pl
• Phone: +48 22 5487 726
• Web: www.imif.lukasiewicz.gov.pl